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2SBA6 15KPA28C T373A TDA8512J ZHCS1000 08S19 224EEY EVAL2
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4056
DESCRIPTION With ITO-220 package Switching power transistor
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg
Collector-base voltage
Collector-emitter voltage

PARAMETER
CONDITIONS Open emitter Open base
CHA IN
Collector current Base current Base current-peak
Emitter-base voltage
E SEM NG
Open collector
DUC CON I
VALUE 600
TOR
7 8 16 4 8
UNIT V V V A A A A W ae ae
450
Collector current-Peak
Total power dissipation Junction temperature Storage temperature
TC=25ae
45 150 -55~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4056
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT ton ts tf Collector cut-off current Emitter cut-off current DC current gain DC current gain At rated volatge IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 0.1 mA 0.1 mA CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A MIN 450 1.0 1.5 TYP. MAX UNIT V V V
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO
Fall time
Transition frequency

Turn-on time Storage time
INC
E SEM ANG H
OND IC
TOR UC
20 0.5 2.0 0.2
MHz |I |I |I s s s
IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5| VBB2=4V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4056

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.20 mm)
3


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